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| www..com NIKO-SEM N-Channel Logic Level Enhancement Mode Field Effect Transistor TO-252 (D2PAK) P75N02LD D PRODUCT SUMMARY V(BR)DSS 25 RDS(ON) 5m ID 75A 1. GATE 2. DRAIN 3. SOURCE G S ABSOLUTE MAXIMUM RATINGS (TC = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Avalanche Current Avalanche Energy Repetitive Avalanche Energy Power Dissipation 2 1 SYMBOL VGS LIMITS 20 75 50 170 60 140 5.6 65 38 -55 to 150 275 UNITS V TC = 25 C TC = 100 C ID IDM IAR A L = 0.1mH L = 0.05mH TC = 25 C TC = 100 C 1 EAS EAR PD Tj, Tstg TL mJ W Operating Junction & Storage Temperature Range Lead Temperature ( /16" from case for 10 sec.) THERMAL RESISTANCE RATINGS THERMAL RESISTANCE Junction-to-Case Junction-to-Ambient Case-to-Heatsink 1 2 C SYMBOL RJC RJA RCS TYPICAL MAXIMUM 2.3 62.5 UNITS C / W 0.6 Pulse width limited by maximum junction temperature. Duty cycle 1 ELECTRICAL CHARACTERISTICS (TC = 25 C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS STATIC Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current V(BR)DSS VGS(th) IGSS IDSS VGS = 0V, ID = 250A VDS = VGS, ID = 250A VDS = 0V, VGS = 20V VDS = 20V, VGS = 0V VDS = 20V, VGS = 0V, TJ = 125 C 25 1 1.5 3 250 25 250 V nA A LIMITS UNIT MIN TYP MAX 1 AUG-02-2001 NIKO-SEM On-State Drain Current1 Drain-Source On-State Resistance1 N-Channel Logic Level Enhancement Mode Field Effect Transistor ID(ON) RDS(ON) gfs VDS = 10V, VGS = 10V VGS = 10V, ID = 30A VGS = 7V, ID = 24A VDS = 15V, ID = 30A DYNAMIC 70 TO-252 (D2PAK) P75N02LD A 5 6 16 7 8 m S Forward Transconductance1 Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge2 Gate-Source Charge Gate-Drain Charge2 Turn-On Delay Time2 Rise Time 2 2 Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf VDS = 15V, RL = 1 ID 30A, VGS = 10V, RGS = 2.5 VDS = 0.5V(BR)DSS, VGS = 10V, ID = 35A VGS = 0V, VDS = 15V, f = 1MHz 5000 1800 800 140 40 75 7 7 24 6 nS nC pF Turn-Off Delay Time2 Fall Time2 SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TC = 25 C) Continuous Current Pulsed Current 3 IS ISM VSD trr IRM(REC) Qrr IF = IS, dlF/dt = 100A / S IF = IS, VGS = 0V 37 200 0.043 75 170 1.3 A V nS A C Forward Voltage1 Reverse Recovery Time Peak Reverse Recovery Current Reverse Recovery Charge 1 2 Pulse test : Pulse Width 300 sec, Duty Cycle 2. Independent of operating temperature. 3 Pulse width limited by maximum junction temperature. REMARK: THE PRODUCT MARKED WITH "P75N02LD", DATE CODE or LOT # 2 AUG-02-2001 NIKO-SEM N-Channel Logic Level Enhancement Mode Field Effect Transistor TO-252 (D2PAK) P75N02LD TO-252 (DPAK) MECHANICAL DATA mm Min. 9.35 2.2 0.48 0.89 0.45 0.03 6 Typ. Max. 10.1 2.4 0.6 1.5 0.6 0.23 6.2 mm Min. Typ. 0.8 6.4 5.2 0.6 0.64 4.4 6.6 5.4 1 0.9 4.6 Max. Dimension A B C D E F G Dimension H I J K L M N 3 AUG-02-2001 |
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